R. Takemura
R. Takemura publishes mostly in Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Hardware and Architecture, on topics such as Semiconductor materials and devices, Advancements in Semiconductor Devices and Circuit Design and Magnetic properties of thin films.
- World rank
- #3,019,773 of 7,710,434 ranked researchers
- Rank in Japan
- #67,744 of 383,136
- Works
- 72
- Citations
- 1.6k
- Citations per work
- 22.0
What does R. Takemura research?
R. Takemura's work is mostly in Engineering (53%), Physics and Astronomy (20%), Computer Science (9%).
Their six largest subfields, inside their fields and domains; the grey slice is everything else they publish. The interactive view splits every one of their works down to single topics.
The fields and subfields, with their numbers
- Physical Sciences6387.6%
- Engineering3953.5%
- Physics and Astronomy1520.5%
- Computer Science79.4%
- Materials Science34.2%
- Everything else912.4%
- 1Electrical and Electronic Engineering50% of their works
- 2Atomic and Molecular Physics, and Optics20% of their works
- 3Hardware and Architecture5% of their works
- 4Computer Networks and Communications5% of their works
- 5Materials Chemistry4% of their works
- 6Biomedical Engineering3% of their works
Research topics
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Magnetic properties of thin films
- Quantum and electron transport phenomena
- Advanced Memory and Neural Computing
- Ferroelectric and Negative Capacitance Devices
- Semiconductor Quantum Structures and Devices
- Low-power high-performance VLSI design
Which keywords describe R. Takemura's research?
The keywords of their largest research topics: Process Variation, Spintronics, Atomic Layer Deposition, High-k Dielectrics, Nanowire Transistors, Tunnel Field-Effect Transistors, Neuromorphic Computing and Magnetic Tunnel Junctions.
- Low-Power
- Quantum Dots
- Ferroelectricity
- Memristor
- Electron Spin
- Magnetic Tunnel Junctions
- Tunnel Field-Effect Transistors
- High-k Dielectrics
- Spintronics
- Process Variation
- Atomic Layer Deposition
- Nanowire Transistors
- Neuromorphic Computing
- Skyrmions
- Semiconductor Quantum Dots
- Resistive Switching
- Hafnium Oxide
- Semiconductor
- VLSI Circuits
Size is their works in the topics tagged with each word, from their 8 largest topics. Each links to the topic it comes from most.
All 19 words, with their numbers
- Process Variation352 topics
- Spintronics332 topics
- Atomic Layer Deposition281 topic
- High-k Dielectrics281 topic
- Nanowire Transistors271 topic
- Tunnel Field-Effect Transistors271 topic
- Neuromorphic Computing212 topics
- Magnetic Tunnel Junctions181 topic
- Skyrmions181 topic
- Electron Spin151 topic
- Semiconductor Quantum Dots151 topic
- Memristor121 topic
- Resistive Switching121 topic
- Ferroelectricity91 topic
- Hafnium Oxide91 topic
- Quantum Dots91 topic
- Semiconductor91 topic
- Low-Power81 topic
- VLSI Circuits81 topic
Where does R. Takemura work?
R. Takemura's main affiliation in the publication record is Hitachi (Japan), Japan.
How many publications and citations does R. Takemura have?
OpenAlex counts 72 works and 1,583 citations for R. Takemura, an h-index of 15, ranking #3,019,773 of 7,710,434 researchers worldwide on the quality score.
Ranked on field-normalised excellence (50%), output (30%) and citations (20%). Counts come from OpenAlex author records, which occasionally merge different people who share a name or split one person into several.
Papers, co-authors, who cited this work and researchers on the nearest topics have tabs of their own, above. Is this your page? Claim it with your ORCID iD, or request a correction or removal.
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