Thomas R. Fullowan
Thomas R. Fullowan publishes mostly in Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics, on topics such as Semiconductor materials and devices, Semiconductor Quantum Structures and Devices and Advancements in Semiconductor Devices and Circuit Design.
- World rank
- #6,619,834 of 7,710,434 ranked researchers
- Rank in United States
- #1,538,604 of 1,627,098
- Works
- 93
- Citations
- 1.1k
- Citations per work
- 12.2
What does Thomas R. Fullowan research?
Thomas R. Fullowan's work is mostly in Engineering (72%), Physics and Astronomy (21%), Materials Science (4%).
Their six largest subfields, inside their fields and domains; the grey slice is everything else they publish. The interactive view splits every one of their works down to single topics.
The fields and subfields, with their numbers
- Physical Sciences9097.1%
- Engineering6771.6%
- Physics and Astronomy2021.2%
- Materials Science44.3%
- Everything else32.9%
- 1Electrical and Electronic Engineering68% of their works
- 2Atomic and Molecular Physics, and Optics16% of their works
- 3Condensed Matter Physics5% of their works
- 4Materials Chemistry4% of their works
- 5Computational Mechanics2% of their works
- 6Biomedical Engineering2% of their works
Research topics
- Semiconductor materials and devices
- Semiconductor Quantum Structures and Devices
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor Lasers and Optical Devices
- GaN-based semiconductor devices and materials
- Radio Frequency Integrated Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Plasma Diagnostics and Applications
Which keywords describe Thomas R. Fullowan's research?
The keywords of their largest research topics: Atomic Layer Deposition, High-k Dielectrics, Band Parameters, Nanowires, Quantum Dots, Semiconductor, Integrated Circuits and Nanowire Transistors.
- Plasma Etching
- Oscillators
- CMOS
- Semiconductor Lasers
- III-Nitrides
- Nanowire Transistors
- Semiconductor
- Nanowires
- High-k Dielectrics
- Atomic Layer Deposition
- Band Parameters
- Quantum Dots
- Integrated Circuits
- Tunnel Field-Effect Transistors
- Optical Interconnects
- Semiconductors
- Failure Analysis
- Photon Emission Microscopy
- Semiconductor Industry
Size is their works in the topics tagged with each word, from their 8 largest topics. Each links to the topic it comes from most.
All 19 words, with their numbers
- Atomic Layer Deposition651 topic
- High-k Dielectrics651 topic
- Band Parameters492 topics
- Nanowires492 topics
- Quantum Dots341 topic
- Semiconductor341 topic
- Integrated Circuits242 topics
- Nanowire Transistors221 topic
- Tunnel Field-Effect Transistors221 topic
- III-Nitrides151 topic
- Optical Interconnects151 topic
- Semiconductor Lasers151 topic
- Semiconductors151 topic
- CMOS121 topic
- Failure Analysis121 topic
- Oscillators121 topic
- Photon Emission Microscopy121 topic
- Plasma Etching111 topic
- Semiconductor Industry111 topic
Where does Thomas R. Fullowan work?
Thomas R. Fullowan's main affiliation in the publication record is AT&T (United States), United States.
How many publications and citations does Thomas R. Fullowan have?
OpenAlex counts 93 works and 1,130 citations for Thomas R. Fullowan, an h-index of 22, ranking #6,619,834 of 7,710,434 researchers worldwide on the quality score.
Ranked on field-normalised excellence (50%), output (30%) and citations (20%). Counts come from OpenAlex author records, which occasionally merge different people who share a name or split one person into several.
Papers, co-authors, who cited this work and researchers on the nearest topics have tabs of their own, above. Is this your page? Claim it with your ORCID iD, or request a correction or removal.
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