Most cited papers in GaN-based semiconductor devices and materials
What are the most cited papers in GaN-based semiconductor devices and materials?
The most cited paper in GaN-based semiconductor devices and materials is "Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes" (Shuji Nakamura, Takashi Mukai, Masayuki Senoh, 1994), with 3,816 citations. Next come "GaAs, AlAs, and Al x Ga1− x As: Material parameters for use in research and device applications" (3,287) and "First-principles calculations for defects and impurities: Applications to III-nitrides" (3,256).
Showing 50 of 100 papers. Every paper with more than 864 citations is listed.
| # | Paper | ||
|---|---|---|---|
| 1 | Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes Shuji Nakamura, Takashi Mukai, Masayuki Senoh · Applied Physics Letters | 28 Mar 1994 | 3,816 |
| 2 | GaAs, AlAs, and Al x Ga1− x As: Material parameters for use in research and device applications Sadao Adachi · Journal of Applied Physics | Aug 1985 | 3,287 |
| 3 | First-principles calculations for defects and impurities: Applications to III-nitrides Chris G. Van de Walle, Jörg Neugebauer · Journal of Applied Physics | 25 Mar 2004 | 3,256 |
| 4 | Spontaneous polarization and piezoelectric constants of III-V nitrides Fabio Bernardini, Vincenzo Fiorentini, David Vanderbilt · Physical review. B, Condensed matter | 15 Oct 1997 | 3,096 |
| 5 | Direct-bandgap properties and evidence for ultraviolet lasing of hexagonal boron nitride single crystal Kenji Watanabe, Takashi Taniguchi, Hisao Kanda · Nature Materials | 23 May 2004 | 3,062 |
| 6 | Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures O. Ambacher, Joseph A. Smart, J. R. Shealy et al. · Journal of Applied Physics | 15 Mar 1999 | 3,004 |
| 7 | GaN, AlN, and InN: A review S. Strite, Hadis MORKOÇ · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena | Jul 1992 | 2,818 |
| 8 | Band parameters for nitrogen-containing semiconductors I. Vurgaftman, Jerry R. Meyer · Journal of Applied Physics | 15 Sep 2003 | 2,795 |
| 9 | Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies Hadis Morkoç, S. Strite, Guangjun Gao et al. · Journal of Applied Physics | Aug 1994 | 2,726 |
| 10 | A Survey of Wide Bandgap Power Semiconductor Devices José del R. Millán, Philippe Godignon, X. Perpiñà et al. · IEEE Transactions on Power Electronics | 14 Jun 2013 | 2,653 |
| 11 | InGaN-Based Multi-Quantum-Well-Structure Laser Diodes Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama et al. · Japanese Journal of Applied Physics | 1996 | 2,503 |
| 12 | AlGaN/GaN HEMTs-an overview of device operation and applications Umesh Kumar Mishra, Primit Parikh, Yifeng Wu · Proceedings of the IEEE | Jun 2002 | 2,296 |
| 13 | Nanowire Ultraviolet Photodetectors and Optical Switches Hannes Kind, H. Yan, Benjamin M. Messer et al. · Advanced Materials | 16 Jan 2002 | 2,270 |
| 14 | Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer Hiroshi Amano, Nobuhiko Sawaki, Isamu Akasaki et al. · Applied Physics Letters | 3 Feb 1986 | 2,202 |
| 15 | Optically pumped lasing of ZnO at room temperature Darren M. Bagnall, Y. F. Chen, Z. Q. Zhu et al. · Applied Physics Letters | 28 Apr 1997 | 2,195 |
| 16 | Prospects for LED lighting Siddha Pimputkar, James S. Speck, Steven P. DenBaars et al. · Nature Photonics | 31 Mar 2009 | 2,189 |
| 17 | Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO Atsushi Tsukazaki, Akira Ohtomo, Takeyoshi Onuma et al. · Nature Materials | 19 Dec 2004 | 2,077 |
| 18 | P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI) Hiroshi Amano, Masahiro Kito, Kazumasa Hiramatsu et al. · Japanese Journal of Applied Physics | Dec 1989 | 1,981 |
| 19 | Luminescence properties of defects in GaN Michael Alexander Reshchikov, Hadis Morkoç · Journal of Applied Physics | 14 Mar 2005 | 1,955 |
| 20 | Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting Michael R. Krames, Oleg B. Shchekin, Regina Mueller‐Mach et al. · Journal of Display Technology | Jun 2007 | 1,946 |
| 21 | The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes Shuji Nakamura · Science | 14 Aug 1998 | 1,874 |
| 22 | Room-temperature ultraviolet laser emission from self-assembled ZnO microcrystallite thin films Zikang Tang, George K. Wong, Ping Yu et al. · Applied Physics Letters | 22 Jun 1998 | 1,828 |
| 23 | GaN-Based RF Power Devices and Amplifiers Umesh Kumar Mishra, Likun Shen, Thomas E. Kazior et al. · Proceedings of the IEEE | 16 Jan 2008 | 1,828 |
| 24 | GaN: Processing, defects, and devices S. J. Pearton, J.C. Zolper, RANDY J. SHUL et al. · Journal of Applied Physics | Jul 1999 | 1,812 |
| 25 | An aluminium nitride light-emitting diode with a wavelength of 210 nanometres Yoshitaka Taniyasu, Makoto Kasu, Toshiki Makimōto · Nature | May 2006 | 1,758 |
| 26 | Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes Patrick Waltereit, O. Brandt, A. Trampert et al. · Nature | Aug 2000 | 1,734 |
| 27 | Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures O. Ambacher, B. E. Foutz, Joseph A. Smart et al. · Journal of Applied Physics | 2000 | 1,729 |
| 28 | GaN-on-Si Power Technology: Devices and Applications Kevin Jing Chen, Oliver D. Häberlen, Alex Lidow et al. · IEEE Transactions on Electron Devices | 27 Feb 2017 | 1,708 |
| 29 | Nitride-based semiconductors for blue and green light-emitting devices F. A. Ponce, David P. Bour · Nature | Mar 1997 | 1,685 |
| 30 | Band Anticrossing in GaInNAs Alloys W. Shan, W. Walukiewicz, Joel W. Ager et al. · Physical Review Letters | 8 Feb 1999 | 1,627 |
| 31 | Simple accurate expressions for planar spiral inductances Sunderarajan S. Mohan, Maria del Mar Hershenson, Stephen Boyd et al. · IEEE Journal of Solid-State Circuits | 1999 | 1,617 |
| 32 | Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges Jeff Y. Tsao et al. · Advanced Electronic Materials | 4 Dec 2017 | 1,588 |
| 33 | High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures Shuji Nakamura, Masayuki Senoh, Naruhito Iwasa et al. · Japanese Journal of Applied Physics | Jul 1995 | 1,502 |
| 34 | Frequency-Independent and Frequency-Dependent Nonlinear Models of TWT Amplifiers Adel A. M. Saleh · IEEE Transactions on Communications | Nov 1981 | 1,491 |
| 35 | Surface-plasmon-enhanced light emitters based on InGaN quantum wells Koichi Okamoto, Isamu Niki, Alexander Shvartser et al. · Nature Materials | 22 Aug 2004 | 1,474 |
| 36 | Semiconductor ultraviolet detectors Manijeh Razeghi, Antoni Rogalski · Journal of Applied Physics | 15 May 1996 | 1,474 |
| 37 | Unusual properties of the fundamental band gap of InN Junqiao Wu, W. Walukiewicz, Kin Man Yu et al. · Applied Physics Letters | 27 May 2002 | 1,471 |
| 38 | Growth and applications of Group III-nitrides O. Ambacher · Journal of Physics D Applied Physics | 21 Oct 1998 | 1,459 |
| 39 | The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs Rama Vetury, N.Q. Zhang, S. Keller et al. · IEEE Transactions on Electron Devices | Mar 2001 | 1,441 |
| 40 | Organic electroluminescent devices with improved stability Steven A. Van Slyke, C. H. Chen, Chak Wah Tang · Applied Physics Letters | 7 Oct 1996 | 1,428 |
| 41 | Low-Temperature Al 2 O 3 Atomic Layer Deposition Markus D. Groner, Francois H. Fabreguette, Jeffrey W. Elam et al. · Chemistry of Materials | 30 Jan 2004 | 1,394 |
| 42 | Wide-bandgap semiconductor ultraviolet photodetectors Eva Monroy, F Omn s, F. Calle · Semiconductor Science and Technology | 4 Mar 2003 | 1,384 |
| 43 | THE PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTAL-LINE GaN Herbert Paul Maruska, James J. Tietjen · Applied Physics Letters | 15 Nov 1969 | 1,333 |
| 44 | Ultraviolet-emitting ZnO nanowires synthesized by a physical vapor deposition approach Yanlei Kong, Dapeng Yu, B. Zhang et al. · Applied Physics Letters | 22 Jan 2001 | 1,326 |
| 45 | GaN Growth Using GaN Buffer Layer Shuji Nakamura Shuji Nakamura · Japanese Journal of Applied Physics | Oct 1991 | 1,324 |
| 46 | The 2018 GaN power electronics roadmap Hiroshi Amano et al. · Journal of Physics D Applied Physics | 26 Mar 2018 | 1,322 |
| 47 | The emergence and prospects of deep-ultraviolet light-emitting diode technologies Michael Kneissl, Tae‐Yeon Seong, Jung Woo Han et al. · Nature Photonics | 22 Mar 2019 | 1,315 |
| 48 | Plasma assisted molecular beam epitaxy of ZnO on c -plane sapphire: Growth and characterization Yefan Chen, Darren M. Bagnall, Hang-jun Koh et al. · Journal of Applied Physics | Oct 1998 | 1,311 |
| 49 | Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening Tetsuo Fujii, Yan Gao, Rajat Kumar Sharma et al. · Applied Physics Letters | 4 Feb 2004 | 1,311 |
| 50 | Origin of efficiency droop in GaN-based light-emitting diodes Minho Kim, M. Schubert, Qi Dai et al. · Applied Physics Letters | 29 Oct 2007 | 1,305 |
Citations are OpenAlex's own counts, from its 2026-09-23 snapshot, so the ranking can differ from Google Scholar or Web of Science. A paper is listed for a field when OpenAlex files it under one of the field's topics; retracted papers and papers whose citation count cannot be traced to citing works are left out, and a preprint and the article it became are shown once. Release dates are OpenAlex's: where a source gave only a month or a year, that is what is shown. How the lists are chosen.