Question 1

Which countries lead GaN-based semiconductor devices and materials research?

Accepted Answer

By volume, China and the United States publish the most (2.7k and 916 works in 2022-now).

Question 2

Which institutions lead GaN-based semiconductor devices and materials research?

Accepted Answer

By volume in 2022-now, Chinese Academy of Sciences publishes the most GaN-based semiconductor devices and materials research, followed by Xidian University and Centre National de la Recherche Scientifique.

Question 3

Who are the leading researchers in GaN-based semiconductor devices and materials?

Accepted Answer

The most-cited researchers publishing on GaN-based semiconductor devices and materials include Zhong Lin Wang, Georg Kresse and George M. Whitesides.

Question 4

Where is GaN-based semiconductor devices and materials research done?

Accepted Answer

The largest centres of GaN-based semiconductor devices and materials research in 2022-now are Beijing (China), Xi'an (China), Nanjing (China) and Guangzhou (China). Among places with at least 20 works in it, it is an unusually large share of all research in Hsinchu and Santa Barbara.

Question 5

Where is the best place to study GaN-based semiconductor devices and materials?

Accepted Answer

Among universities, judged by research, Virginia Tech, King Abdullah University of Science and Technology and Xidian University score highest, combining excellence, specialisation, size, growth and international reach. Research strength is one signal when choosing where to study; it does not measure teaching.

Question 6

Is GaN-based semiconductor devices and materials research growing?

Accepted Answer

Output in 2022-2025 was 5% higher than in 2018-2021, peaking in 2011. The fastest-growing topics are GaN-based semiconductor devices and materials.

Question 7

What are the most cited papers in GaN-based semiconductor devices and materials?

Accepted Answer

The most cited paper in GaN-based semiconductor devices and materials is "Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes" (Shuji Nakamura, Takashi Mukai, Masayuki Senoh, 1994), with 3,816 citations. Next come "GaAs, AlAs, and Al x Ga1− x As: Material parameters for use in research and device applications" (3,287) and "First-principles calculations for defects and impurities: Applications to III-nitrides" (3,256).