Barry Sassman
Barry Sassman publishes mostly in Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering, on topics such as Semiconductor materials and devices, Advancements in Semiconductor Devices and Circuit Design and Integrated Circuits and Semiconductor Failure Analysis.
- World rank
- #7,332,335 of 7,710,434 ranked researchers
- Rank in United States
- #1,601,492 of 1,627,098
- Works
- 30
- Citations
- 203
- Citations per work
- 6.8
What does Barry Sassman research?
Barry Sassman's work is mostly in Engineering (89%), Physics and Astronomy (8%), Materials Science (1%).
Their six largest subfields, inside their fields and domains; the grey slice is everything else they publish. The interactive view splits every one of their works down to single topics.
The fields and subfields, with their numbers
- Physical Sciences2997.7%
- Engineering2788.7%
- Physics and Astronomy27.9%
- Materials Science01.1%
- Social Sciences01.1%
- Social Sciences01.1%
- 1Electrical and Electronic Engineering82% of their works
- 2Atomic and Molecular Physics, and Optics8% of their works
- 3Biomedical Engineering6% of their works
- 4Aerospace Engineering1% of their works
- 5Materials Chemistry1% of their works
- 6Sociology and Political Science1% of their works
Research topics
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Semiconductor materials and interfaces
- Silicon and Solar Cell Technologies
- Silicon Carbide Semiconductor Technologies
- Ferroelectric and Negative Capacitance Devices
- Nanowire Synthesis and Applications
Which keywords describe Barry Sassman's research?
The keywords of their largest research topics: Atomic Layer Deposition, High-k Dielectrics, Nanowire Transistors, Tunnel Field-Effect Transistors, Solar Cells, Failure Analysis, Integrated Circuits and Metal-Semiconductor Contacts.
- Nanosensors
- Silicon
- Hafnium Oxide
- Efficiency
- Metal-Semiconductor Contacts
- Failure Analysis
- Tunnel Field-Effect Transistors
- High-k Dielectrics
- Atomic Layer Deposition
- Nanowire Transistors
- Solar Cells
- Integrated Circuits
- Schottky Barrier
- Ferroelectricity
- Reliability
- Wide Bandgap Semiconductors
- Nanowire
Size is their works in the topics tagged with each word, from their 8 largest topics. Each links to the topic it comes from most.
All 17 words, with their numbers
- Atomic Layer Deposition241 topic
- High-k Dielectrics241 topic
- Nanowire Transistors221 topic
- Tunnel Field-Effect Transistors221 topic
- Solar Cells123 topics
- Failure Analysis111 topic
- Integrated Circuits111 topic
- Metal-Semiconductor Contacts51 topic
- Schottky Barrier51 topic
- Efficiency41 topic
- Ferroelectricity41 topic
- Hafnium Oxide41 topic
- Reliability41 topic
- Silicon41 topic
- Wide Bandgap Semiconductors41 topic
- Nanosensors31 topic
- Nanowire31 topic
Where does Barry Sassman work?
Barry Sassman's main affiliation in the publication record is The University of Texas at Austin, United States.
How many publications and citations does Barry Sassman have?
OpenAlex counts 30 works and 203 citations for Barry Sassman, an h-index of 9, ranking #7,332,335 of 7,710,434 researchers worldwide on the quality score.
Ranked on field-normalised excellence (50%), output (30%) and citations (20%). Counts come from OpenAlex author records, which occasionally merge different people who share a name or split one person into several.
Papers, co-authors, who cited this work and researchers on the nearest topics have tabs of their own, above. Is this your page? Claim it with your ORCID iD, or request a correction or removal.
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