D.L. Blackburn
D.L. Blackburn publishes mostly in Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry, on topics such as Silicon Carbide Semiconductor Technologies, Advancements in Semiconductor Devices and Circuit Design and Semiconductor materials and devices.
- World rank
- #1,606,545 of 7,710,434 ranked researchers
- Rank in United States
- #499,719 of 1,627,098
- Works
- 53
- Citations
- 1.5k
- Citations per work
- 28.5
What does D.L. Blackburn research?
D.L. Blackburn's work is mostly in Engineering (74%), Materials Science (8%), Physics and Astronomy (6%).
Their six largest subfields, inside their fields and domains; the grey slice is everything else they publish. The interactive view splits every one of their works down to single topics.
The fields and subfields, with their numbers
- Physical Sciences4788.5%
- Engineering3973.6%
- Materials Science58.5%
- Physics and Astronomy36.4%
- Everything else611.5%
- 1Electrical and Electronic Engineering69% of their works
- 2Atomic and Molecular Physics, and Optics6% of their works
- 3Materials Chemistry6% of their works
- 4Mechanical Engineering3% of their works
- 5Electronic, Optical and Magnetic Materials2% of their works
- 6Biomedical Engineering1% of their works
Research topics
- Silicon Carbide Semiconductor Technologies
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- Silicon and Solar Cell Technologies
- Thermal properties of materials
- Electrostatic Discharge in Electronics
- Electronic Packaging and Soldering Technologies
- Semiconductor materials and interfaces
Which keywords describe D.L. Blackburn's research?
The keywords of their largest research topics: Thermal Management, High-Temperature Electronics, Reliability, Wide Bandgap Semiconductors, Solar Cells, Nanowire Transistors, Tunnel Field-Effect Transistors and Atomic Layer Deposition.
- Metal-Semiconductor Contacts
- Interfacial Reactions
- CMOS Technology
- Graphene
- High-k Dielectrics
- Atomic Layer Deposition
- Nanowire Transistors
- Wide Bandgap Semiconductors
- High-Temperature Electronics
- Thermal Management
- Reliability
- Solar Cells
- Tunnel Field-Effect Transistors
- Efficiency
- Silicon
- Thermal Conductivity
- ESD Protection
- Lead-free Solders
- Schottky Barrier
Size is their works in the topics tagged with each word, from their 8 largest topics. Each links to the topic it comes from most.
All 19 words, with their numbers
- Thermal Management252 topics
- High-Temperature Electronics242 topics
- Reliability181 topic
- Wide Bandgap Semiconductors181 topic
- Solar Cells152 topics
- Nanowire Transistors111 topic
- Tunnel Field-Effect Transistors111 topic
- Atomic Layer Deposition91 topic
- Efficiency91 topic
- High-k Dielectrics91 topic
- Silicon91 topic
- Graphene71 topic
- Thermal Conductivity71 topic
- CMOS Technology61 topic
- ESD Protection61 topic
- Interfacial Reactions61 topic
- Lead-free Solders61 topic
- Metal-Semiconductor Contacts61 topic
- Schottky Barrier61 topic
Where does D.L. Blackburn work?
D.L. Blackburn's main affiliation in the publication record is National Institute of Standards and Technology, United States.
How many publications and citations does D.L. Blackburn have?
OpenAlex counts 53 works and 1,511 citations for D.L. Blackburn, an h-index of 19, ranking #1,606,545 of 7,710,434 researchers worldwide on the quality score.
Ranked on field-normalised excellence (50%), output (30%) and citations (20%). Counts come from OpenAlex author records, which occasionally merge different people who share a name or split one person into several.
Papers, co-authors, who cited this work and researchers on the nearest topics have tabs of their own, above. Is this your page? Claim it with your ORCID iD, or request a correction or removal.
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