Katsuki Furukawa
Katsuki Furukawa publishes mostly in Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials, on topics such as Semiconductor materials and devices, Silicon Carbide Semiconductor Technologies and Semiconductor materials and interfaces.
- World rank
- #3,505,264 of 7,710,434 ranked researchers
- Rank in United States
- #980,307 of 1,627,098
- Works
- 22
- Citations
- 542
- Citations per work
- 24.6
What does Katsuki Furukawa research?
Katsuki Furukawa's work is mostly in Engineering (71%), Physics and Astronomy (15%), Materials Science (9%).
Their six largest subfields, inside their fields and domains; the grey slice is everything else they publish. The interactive view splits every one of their works down to single topics.
The fields and subfields, with their numbers
- Physical Sciences2195.4%
- Engineering1671.2%
- Physics and Astronomy315.1%
- Materials Science29.1%
- Everything else14.6%
- 1Electrical and Electronic Engineering67% of their works
- 2Atomic and Molecular Physics, and Optics11% of their works
- 3Electronic, Optical and Magnetic Materials9% of their works
- 4Condensed Matter Physics4% of their works
- 5Mechanics of Materials3% of their works
- 6Mechanical Engineering2% of their works
Research topics
- Semiconductor materials and devices
- Silicon Carbide Semiconductor Technologies
- Semiconductor materials and interfaces
- Thin-Film Transistor Technologies
- Copper Interconnects and Reliability
- GaN-based semiconductor devices and materials
- Advancements in Semiconductor Devices and Circuit Design
- Ga2O3 and related materials
Which keywords describe Katsuki Furukawa's research?
The keywords of their largest research topics: Power Devices, Atomic Layer Deposition, High-k Dielectrics, Reliability, Wide Bandgap Semiconductors, Solar Cells, Epitaxial Growth and Nanowires.
- Semiconductor
- Gallium Oxide
- III-Nitrides
- Plasmonics
- Low-k Dielectrics
- Schottky Barrier
- Nanowires
- Solar Cells
- Reliability
- Atomic Layer Deposition
- Power Devices
- High-k Dielectrics
- Wide Bandgap Semiconductors
- Epitaxial Growth
- Metal-Semiconductor Contacts
- Thin Films
- Microelectronics
- Thin-Film Transistors
- Semiconductors
- Nanowire Transistors
- Tunnel Field-Effect Transistors
Size is their works in the topics tagged with each word, from their 8 largest topics. Each links to the topic it comes from most. The words come from the keyword list OpenAlex gives each topic, not from the text of the papers, so a word can appear that none of the papers uses.
All 21 words, with their numbers
- Power Devices202 topics
- Atomic Layer Deposition191 topic
- High-k Dielectrics191 topic
- Reliability181 topic
- Wide Bandgap Semiconductors181 topic
- Solar Cells102 topics
- Epitaxial Growth82 topics
- Nanowires72 topics
- Metal-Semiconductor Contacts61 topic
- Schottky Barrier61 topic
- Thin Films62 topics
- Low-k Dielectrics41 topic
- Microelectronics41 topic
- Plasmonics41 topic
- Thin-Film Transistors41 topic
- III-Nitrides31 topic
- Semiconductors31 topic
- Gallium Oxide21 topic
- Nanowire Transistors21 topic
- Semiconductor21 topic
- Tunnel Field-Effect Transistors21 topic
Where does Katsuki Furukawa work?
Katsuki Furukawa's main affiliation in the publication record is National Archives and Records Administration, United States.
How many publications and citations does Katsuki Furukawa have?
OpenAlex counts 22 works and 542 citations for Katsuki Furukawa, an h-index of 11, ranking #3,505,264 of 7,710,434 researchers worldwide on the quality score.
Ranked on field-normalised citation excellence (50%), output (30%) and citations (20%). Counts come from OpenAlex author records, which occasionally merge different people who share a name or split one person into several.
Papers, co-authors, who cited this work and researchers on the nearest topics have tabs of their own, above. Is this your page? Claim it with your ORCID iD, or request a correction or removal.
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