R. Granzner
R. Granzner publishes mostly in Electrical and Electronic Engineering, Condensed Matter Physics and Materials Chemistry, on topics such as Semiconductor materials and devices, Advancements in Semiconductor Devices and Circuit Design and GaN-based semiconductor devices and materials.
- World rank
- #3,460,307 of 7,710,434 ranked researchers
- Rank in Germany
- #172,755 of 364,343
- Works
- 55
- Citations
- 1.6k
- Citations per work
- 28.4
What does R. Granzner research?
R. Granzner's work is mostly in Engineering (61%), Physics and Astronomy (19%), Materials Science (17%).
Their six largest subfields, inside their fields and domains; the grey slice is everything else they publish. The interactive view splits every one of their works down to single topics.
The fields and subfields, with their numbers
- Physical Sciences5497.7%
- Engineering3461.4%
- Physics and Astronomy1119.1%
- Materials Science917.2%
- Everything else12.3%
- 1Electrical and Electronic Engineering59% of their works
- 2Condensed Matter Physics12% of their works
- 3Materials Chemistry12% of their works
- 4Atomic and Molecular Physics, and Optics7% of their works
- 5Electronic, Optical and Magnetic Materials6% of their works
- 6Biomedical Engineering2% of their works
Research topics
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- GaN-based semiconductor devices and materials
- Silicon Carbide Semiconductor Technologies
- Ga2O3 and related materials
- Graphene research and applications
- Semiconductor Quantum Structures and Devices
- Radio Frequency Integrated Circuit Design
Which keywords describe R. Granzner's research?
The keywords of their largest research topics: Power Devices, Atomic Layer Deposition, High-k Dielectrics, Nanowire Transistors, Tunnel Field-Effect Transistors, Band Parameters, Nanowires and III-Nitrides.
- Oscillators
- Single-Photon Source
- Two-Dimensional Materials
- Ultrawide Bandgap
- Semiconductor
- Reliability
- III-Nitrides
- Band Parameters
- Nanowire Transistors
- Atomic Layer Deposition
- Power Devices
- High-k Dielectrics
- Tunnel Field-Effect Transistors
- Nanowires
- Semiconductors
- Wide Bandgap Semiconductors
- Gallium Oxide
- Graphene
- Quantum Dots
- CMOS
Size is their works in the topics tagged with each word, from their 8 largest topics. Each links to the topic it comes from most.
All 20 words, with their numbers
- Power Devices272 topics
- Atomic Layer Deposition261 topic
- High-k Dielectrics261 topic
- Nanowire Transistors261 topic
- Tunnel Field-Effect Transistors261 topic
- Band Parameters252 topics
- Nanowires252 topics
- III-Nitrides191 topic
- Semiconductors191 topic
- Reliability181 topic
- Wide Bandgap Semiconductors181 topic
- Semiconductor152 topics
- Gallium Oxide91 topic
- Ultrawide Bandgap91 topic
- Graphene81 topic
- Two-Dimensional Materials81 topic
- Quantum Dots61 topic
- Single-Photon Source61 topic
- CMOS51 topic
- Oscillators51 topic
Where does R. Granzner work?
R. Granzner's main affiliation in the publication record is Technische Universität Ilmenau, Germany.
How many publications and citations does R. Granzner have?
OpenAlex counts 55 works and 1,561 citations for R. Granzner, an h-index of 17, ranking #3,460,307 of 7,710,434 researchers worldwide on the quality score.
Ranked on field-normalised excellence (50%), output (30%) and citations (20%). Counts come from OpenAlex author records, which occasionally merge different people who share a name or split one person into several.
Papers, co-authors, who cited this work and researchers on the nearest topics have tabs of their own, above. Is this your page? Claim it with your ORCID iD, or request a correction or removal.
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