Ramin Ghodsi
Ramin Ghodsi publishes mostly in Electrical and Electronic Engineering, Computer Networks and Communications and Computational Theory and Mathematics, on topics such as Semiconductor materials and devices, Advancements in Semiconductor Devices and Circuit Design and Advanced Data Storage Technologies.
- World rank
- #2,614,774 of 7,710,434 ranked researchers
- Rank in United States
- #766,257 of 1,627,098
- Works
- 19
- Citations
- 321
- Citations per work
- 16.9
What does Ramin Ghodsi research?
Ramin Ghodsi's work is mostly in Engineering (86%), Computer Science (14%).
Their six largest subfields, inside their fields and domains; the grey slice is everything else they publish. The interactive view splits every one of their works down to single topics.
The fields and subfields, with their numbers
- Physical Sciences19100.0%
- Engineering1685.7%
- Computer Science314.3%
- 1Electrical and Electronic Engineering86% of their works
- 2Computer Networks and Communications11% of their works
- 3Computational Theory and Mathematics4% of their works
Research topics
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Advanced Data Storage Technologies
- Silicon Carbide Semiconductor Technologies
- Integrated Circuits and Semiconductor Failure Analysis
- Advanced Memory and Neural Computing
- Ferroelectric and Negative Capacitance Devices
- Cellular Automata and Applications
Which keywords describe Ramin Ghodsi's research?
The keywords of their largest research topics: Atomic Layer Deposition, High-k Dielectrics, Nanowire Transistors, Tunnel Field-Effect Transistors, Distributed Storage, Network Coding, Neuromorphic Computing and Reliability.
- Cellular Automata
- Memristor
- Ferroelectricity
- Failure Analysis
- Reliability
- Network Coding
- Tunnel Field-Effect Transistors
- High-k Dielectrics
- Atomic Layer Deposition
- Nanowire Transistors
- Distributed Storage
- Neuromorphic Computing
- Wide Bandgap Semiconductors
- Integrated Circuits
- Hafnium Oxide
- Resistive Switching
- Computation
Size is their works in the topics tagged with each word, from their 8 largest topics. Each links to the topic it comes from most. The words come from the keyword list OpenAlex gives each topic, not from the text of the papers, so a word can appear that none of the papers uses.
All 17 words, with their numbers
- Atomic Layer Deposition181 topic
- High-k Dielectrics181 topic
- Nanowire Transistors121 topic
- Tunnel Field-Effect Transistors121 topic
- Distributed Storage61 topic
- Network Coding61 topic
- Neuromorphic Computing62 topics
- Reliability51 topic
- Wide Bandgap Semiconductors51 topic
- Failure Analysis41 topic
- Integrated Circuits41 topic
- Ferroelectricity31 topic
- Hafnium Oxide31 topic
- Memristor31 topic
- Resistive Switching31 topic
- Cellular Automata21 topic
- Computation21 topic
Where does Ramin Ghodsi work?
Ramin Ghodsi's main affiliation in the publication record is Micron (United States), United States.
How many publications and citations does Ramin Ghodsi have?
OpenAlex counts 19 works and 321 citations for Ramin Ghodsi, an h-index of 8, ranking #2,614,774 of 7,710,434 researchers worldwide on the quality score.
Ranked on field-normalised citation excellence (50%), output (30%) and citations (20%). Counts come from OpenAlex author records, which occasionally merge different people who share a name or split one person into several.
Papers, co-authors, who cited this work and researchers on the nearest topics have tabs of their own, above. Is this your page? Claim it with your ORCID iD, or request a correction or removal.
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