Rongzheng Ding
Rongzheng Ding publishes mostly in Electrical and Electronic Engineering, Polymers and Plastics and Materials Chemistry, on topics such as Semiconductor materials and devices, Advancements in Semiconductor Devices and Circuit Design and Perovskite Materials and Applications.
- World rank
- #7,064,961 of 7,710,434 ranked researchers
- Rank in China
- #938,053 of 978,568
- Works
- 30
- Citations
- 179
- Citations per work
- 6.0
What does Rongzheng Ding research?
Rongzheng Ding's work is mostly in Engineering (82%), Materials Science (9%), Physics and Astronomy (2%).
Their six largest subfields, inside their fields and domains; the grey slice is everything else they publish. The interactive view splits every one of their works down to single topics.
The fields and subfields, with their numbers
- Physical Sciences2893.3%
- Engineering2582.2%
- Materials Science38.9%
- Physics and Astronomy12.2%
- Everything else26.7%
- 1Electrical and Electronic Engineering78% of their works
- 2Polymers and Plastics6% of their works
- 3Materials Chemistry3% of their works
- 4Atomic and Molecular Physics, and Optics2% of their works
- 5Aerospace Engineering2% of their works
- 6Biomedical Engineering2% of their works
Research topics
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Perovskite Materials and Applications
- Integrated Circuits and Semiconductor Failure Analysis
- Conducting polymers and applications
- Ferroelectric and Negative Capacitance Devices
- Organic Electronics and Photovoltaics
- Low-power high-performance VLSI design
Which keywords describe Rongzheng Ding's research?
The keywords of their largest research topics: Process Variation, Atomic Layer Deposition, High-k Dielectrics, Nanowire Transistors, Tunnel Field-Effect Transistors, Field-Effect Transistors, Failure Analysis and Integrated Circuits.
- VLSI Circuits
- Conjugated Polymers
- Hafnium Oxide
- Polyaniline
- Perovskite Solar Cells
- Integrated Circuits
- Field-Effect Transistors
- Nanowire Transistors
- Atomic Layer Deposition
- Process Variation
- High-k Dielectrics
- Tunnel Field-Effect Transistors
- Failure Analysis
- Organometal Halide Perovskites
- Conducting Polymers
- Ferroelectricity
- Bulk Heterojunction
- Low-Power
Size is their works in the topics tagged with each word, from their 8 largest topics. Each links to the topic it comes from most.
All 18 words, with their numbers
- Process Variation182 topics
- Atomic Layer Deposition151 topic
- High-k Dielectrics151 topic
- Nanowire Transistors151 topic
- Tunnel Field-Effect Transistors151 topic
- Field-Effect Transistors72 topics
- Failure Analysis61 topic
- Integrated Circuits61 topic
- Organometal Halide Perovskites61 topic
- Perovskite Solar Cells61 topic
- Conducting Polymers51 topic
- Polyaniline51 topic
- Ferroelectricity41 topic
- Hafnium Oxide41 topic
- Bulk Heterojunction31 topic
- Conjugated Polymers31 topic
- Low-Power31 topic
- VLSI Circuits31 topic
Where does Rongzheng Ding work?
Rongzheng Ding's main affiliation in the publication record is Fudan University, China.
How many publications and citations does Rongzheng Ding have?
OpenAlex counts 30 works and 179 citations for Rongzheng Ding, an h-index of 8, ranking #7,064,961 of 7,710,434 researchers worldwide on the quality score.
Ranked on field-normalised excellence (50%), output (30%) and citations (20%). Counts come from OpenAlex author records, which occasionally merge different people who share a name or split one person into several.
Papers, co-authors, who cited this work and researchers on the nearest topics have tabs of their own, above. Is this your page? Claim it with your ORCID iD, or request a correction or removal.
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