Ferroelectric and Negative Capacitance Devices
Ferroelectric and Negative Capacitance Devices is a research topic within Electrical and Electronic Engineering. Science Explorer counts 21k research works in it since 1954. 19.9% of them reached the world's top 10% most cited for their field and year.
This cluster of papers focuses on the development and application of ferroelectric devices, particularly in the context of low-power nanoscale applications. The research covers topics such as ferroelectricity in hafnium oxide thin films, negative capacitance in ferroelectric capacitors, doping effects on ferroelectric properties, and the use of ferroelectric field-effect transistors for memory and computing applications.
- Ferroelectricity
- Hafnium Oxide
- Negative Capacitance
- Field-Effect Transistors
- Memory Applications
- Thin Films
- Doping
- Nonvolatile Memory
- Hyperdimensional Computing
- Neuromorphic Computing
- Research works
- 21k fractional, since 1954
- In the world top 10%
- 4.1k per year above
- Top-10% rate
- 19.9% share of its works in the world top 10%
- Growth, 2013–17 → 2018–22
- +86% the tick is no change
Which countries lead Ferroelectric and Negative Capacitance Devices research?
By volume, China and the United States publish the most (2k and 1.1k works in 2022–2025).
By volume, 2022–2025
- 1 China 2k works
- 2 United States 1.1k works
- 3 India 676 works
- 4 South Korea 652 works
- 5 Germany 326 works
- 6 Taiwan 240 works
- 7 Japan 210 works
- 8 France 147 works
- 9 United Kingdom 140 works
- 10 Italy 119 works
How concentrated that is
The same countries as shares of everything the list above accounts for. A node where two countries do two thirds of the work and one spread evenly across twelve read alike as a ranking and not at all alike here.
Shares of the rows listed above, not of the whole node.
Which institutions lead Ferroelectric and Negative Capacitance Devices research?
By volume in 2022–2025, Peking University publishes the most Ferroelectric and Negative Capacitance Devices research, followed by Chinese Academy of Sciences and Tsinghua University.
By volume, 2022–2025
- 1 Peking UniversityChina 92 works
- 2 Chinese Academy of SciencesChina 80 works
- 3 Tsinghua UniversityChina 74 works
- 4 Seoul National UniversitySouth Korea 63 works
- 5 Korea Advanced Institute of Science and TechnologySouth Korea 57 works
- 6 National Yang Ming Chiao Tung UniversityTaiwan 55 works
- 7 Georgia Institute of TechnologyUnited States 54 works
- 8 Xidian UniversityChina 52 works
- 9 Fudan UniversityChina 51 works
- 10 Huazhong University of Science and TechnologyChina 46 works
Who are the leading researchers in Ferroelectric and Negative Capacitance Devices?
The most-cited researchers publishing on Ferroelectric and Negative Capacitance Devices include Kenji Watanabe, Takashi Taniguchi and Yury Gogotsi.
- 1 Kenji Watanabe Japan 6.4k citations
- 2 Takashi Taniguchi Japan 6.2k citations
- 3 Yury Gogotsi United States 5.1k citations
- 4 Huan Liu Australia 4.9k citations
Ranked by citations received across their whole record, among researchers with at least three works on this topic.
Where is Ferroelectric and Negative Capacitance Devices research done?
The largest centres of Ferroelectric and Negative Capacitance Devices research in 2022–2025 are Beijing (China), Seoul (South Korea), Shanghai (China) and Hsinchu (Taiwan). Among places with at least 20 works in it, it is an unusually large share of all research in Hsinchu, Santa Clara and Pohang.
Largest cities, 2022–2025
Where it is the local speciality
- HsinchuTW · 124.3 works22×
- Santa ClaraUS · 33.7 works20×
- PohangKR · 34.4 works20×
- DresdenDE · 71.3 works13×
Location quotient: how much more of its research is in Ferroelectric and Negative Capacitance Devices than the world average.
Where is the best place to study Ferroelectric and Negative Capacitance Devices?
Among universities, judged by research, National University of Singapore, Georgia Institute of Technology and Seoul National University score highest, combining excellence, specialisation, size, growth and international reach. Research strength is one signal when choosing where to study; it does not measure teaching.
One dot per university in the table below. The upper left is the interesting corner: small places doing unusually strong work.
| # | University | Score | Top 10% | Specialisation | Works | Growth |
|---|---|---|---|---|---|---|
| 1 | National University of SingaporeSingapore | 75.8 | 32.4% | 7.0× | 44 | +167.3% |
| 2 | Georgia Institute of TechnologyUnited States | 72.5 | 18.7% | 13.6× | 54 | +276.1% |
| 3 | Seoul National UniversitySouth Korea | 68.4 | 21.1% | 12.2× | 63 | +67.0% |
| 4 | Korea Advanced Institute of Science and TechnologySouth Korea | 68.4 | 23.8% | 18.8× | 57 | +58.9% |
| 5 | Xidian UniversityChina | 67.9 | 14.7% | 10.9× | 52 | +488.2% |
| 6 | Sungkyunkwan UniversitySouth Korea | 67.4 | 17.0% | 11.2× | 40 | +175.2% |
| 7 | Tsinghua UniversityChina | 64.3 | 22.4% | 5.8× | 74 | +176.1% |
| 8 | Dongguk UniversitySouth Korea | 63.9 | 34.1% | 26.0× | 29 | -45.9% |
| 9 | Peking UniversityChina | 63.4 | 15.2% | 9.1× | 92 | +60.7% |
| 10 | University of Notre DameUnited States | 61.2 | 19.9% | 9.7× | 19 | +157.6% |
Universities only. Score blends excellence (30%), specialisation (25%), size (20%), growth (15%) and international reach (10%), 2015–2022; growth compares 2010–14 with 2015–19.
Is Ferroelectric and Negative Capacitance Devices research growing?
Output in 2018–2022 was 86% higher than in 2013–2017, peaking in 2025. The fastest-growing topics are Ferroelectric and Negative Capacitance Devices.
The same series as a ribbon — one cell per year, darker for more. The line above answers how much; this answers when.
Which topics inside it are moving
Growth and decline on one axis around a shared zero. Two lists side by side hide the thing that matters: whether the growth dwarfs the decline, or the other way round.