А. В. Осипов
А. В. Осипов publishes mostly in Electrical and Electronic Engineering, Materials Chemistry and Condensed Matter Physics, on topics such as GaN-based semiconductor devices and materials, Silicon Carbide Semiconductor Technologies and nanoparticles nucleation surface interactions.
- World rank
- #770,813 of 1,633,909 ranked researchers
- Rank in Russia
- #5,669 of 28,789
- Works
- 65
- Citations
- 158
- Citations per work
- 2.4
What does А. В. Осипов research?
Shares of their own output, by the field each of their topics belongs to. The grey slice is everything not listed.
- 1Electrical and Electronic Engineering18% of their works
- 2Materials Chemistry17% of their works
- 3Condensed Matter Physics12% of their works
- 4Nuclear and High Energy Physics8% of their works
- 5Atmospheric Science6% of their works
- 6Ceramics and Composites6% of their works
Research topics
- GaN-based semiconductor devices and materials
- Silicon Carbide Semiconductor Technologies
- nanoparticles nucleation surface interactions
- Semiconductor materials and devices
- Advanced ceramic materials synthesis
- Solidification and crystal growth phenomena
- Metal and Thin Film Mechanics
- Electron and X-Ray Spectroscopy Techniques
Which keywords describe А. В. Осипов's research?
The keywords of their largest research topics: Crystal Growth, III-Nitrides, Semiconductors, Reliability, Wide Bandgap Semiconductors, X-ray Photoelectron Spectroscopy, Atomic Layer Deposition and Ceramic Materials.
- Thin Films
- Nanoindentation
- Solidification
- Sintering
- Ice Nucleation
- Ceramic Materials
- X-ray Photoelectron Spectroscopy
- Reliability
- III-Nitrides
- Crystal Growth
- Semiconductors
- Wide Bandgap Semiconductors
- Atomic Layer Deposition
- High-k Dielectrics
- Melting
- Phase-Field Models
- Electron Inelastic Mean Free Paths
- Scanning Electron Microscopy
Size is their works in the topics tagged with each word, from their 8 largest topics. Each links to the topic it comes from most.
All 18 words, with their numbers
- Crystal Growth92 topics
- III-Nitrides71 topic
- Semiconductors71 topic
- Reliability61 topic
- Wide Bandgap Semiconductors61 topic
- X-ray Photoelectron Spectroscopy62 topics
- Atomic Layer Deposition51 topic
- Ceramic Materials51 topic
- High-k Dielectrics51 topic
- Ice Nucleation51 topic
- Melting51 topic
- Sintering51 topic
- Phase-Field Models41 topic
- Solidification41 topic
- Electron Inelastic Mean Free Paths31 topic
- Nanoindentation31 topic
- Scanning Electron Microscopy31 topic
- Thin Films31 topic
Where does А. В. Осипов work?
А. В. Осипов's main affiliation in the publication record is Institute of Problems of Mechanical Engineering, Russia.
How many publications and citations does А. В. Осипов have?
Science Explorer counts 65 works and 158 citations for А. В. Осипов, ranking #770,813 of 1,633,909 researchers worldwide on the composite score.
Ranked on field-normalised excellence (50%), output (30%) and citations (20%). Counts come from OpenAlex author records, which occasionally merge different people who share a name or split one person into several.
Papers, co-authors, who cited this work and researchers on the nearest topics are in the interactive view on the map. Is this your page? Request a correction or removal.