Derryl D. J. Allman
Derryl D. J. Allman publishes mostly in Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Materials Chemistry, on topics such as Semiconductor materials and devices, Copper Interconnects and Reliability and Integrated Circuits and Semiconductor Failure Analysis.
- World rank
- #3,993,065 of 7,710,434 ranked researchers
- Rank in United States
- #1,089,732 of 1,627,098
- Works
- 28
- Citations
- 397
- Citations per work
- 14.2
What does Derryl D. J. Allman research?
Derryl D. J. Allman's work is mostly in Engineering (64%), Materials Science (29%), Physics and Astronomy (4%).
Their six largest subfields, inside their fields and domains; the grey slice is everything else they publish. The interactive view splits every one of their works down to single topics.
The fields and subfields, with their numbers
- Physical Sciences2796.5%
- Engineering1863.9%
- Materials Science828.8%
- Physics and Astronomy13.8%
- Everything else13.5%
- 1Electrical and Electronic Engineering56% of their works
- 2Electronic, Optical and Magnetic Materials15% of their works
- 3Materials Chemistry14% of their works
- 4Mechanical Engineering6% of their works
- 5Atomic and Molecular Physics, and Optics4% of their works
- 6Biomedical Engineering1% of their works
Research topics
- Semiconductor materials and devices
- Copper Interconnects and Reliability
- Integrated Circuits and Semiconductor Failure Analysis
- Advancements in Semiconductor Devices and Circuit Design
- Electronic Packaging and Soldering Technologies
- Ferroelectric and Negative Capacitance Devices
- Intermetallics and Advanced Alloy Properties
- ZnO doping and properties
Which keywords describe Derryl D. J. Allman's research?
The keywords of their largest research topics: Atomic Layer Deposition, High-k Dielectrics, Electromigration, Nanowires, Thin Films, Low-k Dielectrics, Microelectronics and Doping.
- Zinc Oxide
- Nanostructures
- Hafnium Oxide
- Tunnel Field-Effect Transistors
- Lead-free Solders
- Integrated Circuits
- Doping
- Low-k Dielectrics
- Nanowires
- High-k Dielectrics
- Atomic Layer Deposition
- Electromigration
- Thin Films
- Microelectronics
- Failure Analysis
- Interfacial Reactions
- Nanowire Transistors
- Ferroelectricity
- Intermetallic Alloys
- TiAl Alloys
Size is their works in the topics tagged with each word, from their 8 largest topics. Each links to the topic it comes from most.
All 20 words, with their numbers
- Atomic Layer Deposition171 topic
- High-k Dielectrics171 topic
- Electromigration162 topics
- Nanowires142 topics
- Thin Films142 topics
- Low-k Dielectrics111 topic
- Microelectronics111 topic
- Doping62 topics
- Failure Analysis61 topic
- Integrated Circuits61 topic
- Interfacial Reactions51 topic
- Lead-free Solders51 topic
- Nanowire Transistors51 topic
- Tunnel Field-Effect Transistors51 topic
- Ferroelectricity31 topic
- Hafnium Oxide31 topic
- Intermetallic Alloys31 topic
- Nanostructures31 topic
- TiAl Alloys31 topic
- Zinc Oxide31 topic
Where does Derryl D. J. Allman work?
Derryl D. J. Allman's main affiliation in the publication record is ON Semiconductor (United States), United States.
How many publications and citations does Derryl D. J. Allman have?
OpenAlex counts 28 works and 397 citations for Derryl D. J. Allman, an h-index of 9, ranking #3,993,065 of 7,710,434 researchers worldwide on the quality score.
Ranked on field-normalised excellence (50%), output (30%) and citations (20%). Counts come from OpenAlex author records, which occasionally merge different people who share a name or split one person into several.
Papers, co-authors, who cited this work and researchers on the nearest topics have tabs of their own, above. Is this your page? Claim it with your ORCID iD, or request a correction or removal.
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