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Researcher · STMicroelectronics (France) · France

F. Arnaud

F. Arnaud publishes mostly in Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics, on topics such as Semiconductor materials and devices, Advancements in Semiconductor Devices and Circuit Design and Integrated Circuits and Semiconductor Failure Analysis.

ORCID 0000-0002-8426-6695 OpenAlex
World rank
#3,026,394
of 7,710,434 ranked researchers
Rank in France
#128,244
of 324,115
Works
131
Citations
2.4k
Citations per work
18.4
h-index
22
i10-index 47Top 15% in Electrical and Electronic Engineering
F. Arnaud

What does F. Arnaud research?

F. Arnaud's work is mostly in Engineering (84%), Materials Science (5%), Physics and Astronomy (4%).

Physical Sciences: 122 works · 93.2% of their workEngineering: 110 works · 83.6% of their workElectrical and Electronic Engineering: 103 works · 78.9% of their workBiomedical Engineering: 4 works · 3.4% of their workMechanics of Materials: 2 works · 1.3% of their workMaterials Science: 6 works · 4.7% of their workMaterials Chemistry: 6 works · 4.7% of their workPhysics and Astronomy: 5 works · 3.9% of their workAtomic and Molecular Physics, and Optics: 5 works · 3.9% of their workComputer Science: 1 works · 1.0% of their workArtificial Intelligence: 1 works · 1.0% of their workEverything else: 9 works · 6.8% of their workTHEIR WORKF. Arnaud131works
Physical Sciences93%

Their six largest subfields, inside their fields and domains; the grey slice is everything else they publish. The interactive view splits every one of their works down to single topics.

The fields and subfields, with their numbers
    1. Engineering11083.6%
    2. Materials Science64.7%
    3. Physics and Astronomy53.9%
    4. Computer Science11.0%
  2. Everything else96.8%
  1. 1Electrical and Electronic Engineering79% of their works
  2. 2Materials Chemistry5% of their works
  3. 3Atomic and Molecular Physics, and Optics4% of their works
  4. 4Biomedical Engineering3% of their works
  5. 5Mechanics of Materials1% of their works
  6. 6Artificial Intelligence1% of their works

Research topics

Which keywords describe F. Arnaud's research?

The keywords of their largest research topics: Process Variation, Atomic Layer Deposition, High-k Dielectrics, Nanowire Transistors, Tunnel Field-Effect Transistors, Non-Volatile Memory, Neuromorphic Computing and Failure Analysis.

Size is their works in the topics tagged with each word, from their 8 largest topics. Each links to the topic it comes from most. The words come from the keyword list OpenAlex gives each topic, not from the text of the papers, so a word can appear that none of the papers uses.

All 19 words, with their numbers
  1. Process Variation902 topics
  2. Atomic Layer Deposition871 topic
  3. High-k Dielectrics871 topic
  4. Nanowire Transistors781 topic
  5. Tunnel Field-Effect Transistors781 topic
  6. Non-Volatile Memory412 topics
  7. Neuromorphic Computing382 topics
  8. Failure Analysis341 topic
  9. Integrated Circuits341 topic
  10. Memristor241 topic
  11. Resistive Switching241 topic
  12. Chalcogenide Glasses171 topic
  13. Phase Change Materials171 topic
  14. Ferroelectricity141 topic
  15. Hafnium Oxide141 topic
  16. Low-Power121 topic
  17. VLSI Circuits121 topic
  18. Plasmonics101 topic
  19. Thin-Film Transistors101 topic

Where does F. Arnaud work?

F. Arnaud's main affiliation in the publication record is STMicroelectronics (France), France.

How many publications and citations does F. Arnaud have?

OpenAlex counts 131 works and 2,414 citations for F. Arnaud, an h-index of 22, ranking #3,026,394 of 7,710,434 researchers worldwide on the quality score.

Ranked on field-normalised citation excellence (50%), output (30%) and citations (20%). Counts come from OpenAlex author records, which occasionally merge different people who share a name or split one person into several.

Papers, co-authors, who cited this work and researchers on the nearest topics have tabs of their own, above. Is this your page? Claim it with your ORCID iD, or request a correction or removal.

Discussion

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