Fu‐Yuan Jin
Fu‐Yuan Jin publishes mostly in Electrical and Electronic Engineering, Condensed Matter Physics and Materials Chemistry, on topics such as Semiconductor materials and devices, Advancements in Semiconductor Devices and Circuit Design and Ferroelectric and Negative Capacitance Devices.
- World rank
- #7,429,200 of 7,710,434 ranked researchers
- Rank in Taiwan
- #55,789 of 57,035
- Works
- 31
- Citations
- 215
- Citations per work
- 6.9
What does Fu‐Yuan Jin research?
Fu‐Yuan Jin's work is mostly in Engineering (76%), Materials Science (11%), Physics and Astronomy (10%).
Their six largest subfields, inside their fields and domains; the grey slice is everything else they publish. The interactive view splits every one of their works down to single topics.
The fields and subfields, with their numbers
- Physical Sciences3097.7%
- Engineering2476.4%
- Materials Science311.2%
- Physics and Astronomy310.1%
- Everything else12.3%
- 1Electrical and Electronic Engineering76% of their works
- 2Condensed Matter Physics6% of their works
- 3Materials Chemistry6% of their works
- 4Atomic and Molecular Physics, and Optics4% of their works
- 5Electronic, Optical and Magnetic Materials3% of their works
- 6Polymers and Plastics2% of their works
Research topics
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Ferroelectric and Negative Capacitance Devices
- Advanced Memory and Neural Computing
- Silicon Carbide Semiconductor Technologies
- GaN-based semiconductor devices and materials
- Semiconductor materials and interfaces
- Silicon and Solar Cell Technologies
Which keywords describe Fu‐Yuan Jin's research?
The keywords of their largest research topics: Atomic Layer Deposition, High-k Dielectrics, Neuromorphic Computing, Nanowire Transistors, Tunnel Field-Effect Transistors, Ferroelectricity, Hafnium Oxide and Memristor.
- Silicon
- Schottky Barrier
- Semiconductors
- Solar Cells
- Resistive Switching
- Memristor
- Ferroelectricity
- Nanowire Transistors
- High-k Dielectrics
- Atomic Layer Deposition
- Neuromorphic Computing
- Tunnel Field-Effect Transistors
- Hafnium Oxide
- Reliability
- Wide Bandgap Semiconductors
- III-Nitrides
- Metal-Semiconductor Contacts
- Efficiency
Size is their works in the topics tagged with each word, from their 8 largest topics. Each links to the topic it comes from most.
All 18 words, with their numbers
- Atomic Layer Deposition191 topic
- High-k Dielectrics191 topic
- Neuromorphic Computing182 topics
- Nanowire Transistors131 topic
- Tunnel Field-Effect Transistors131 topic
- Ferroelectricity101 topic
- Hafnium Oxide101 topic
- Memristor81 topic
- Reliability81 topic
- Resistive Switching81 topic
- Wide Bandgap Semiconductors81 topic
- Solar Cells72 topics
- III-Nitrides51 topic
- Semiconductors51 topic
- Metal-Semiconductor Contacts41 topic
- Schottky Barrier41 topic
- Efficiency31 topic
- Silicon31 topic
Where does Fu‐Yuan Jin work?
Fu‐Yuan Jin's main affiliation in the publication record is National Sun Yat-sen University, Taiwan.
How many publications and citations does Fu‐Yuan Jin have?
OpenAlex counts 31 works and 215 citations for Fu‐Yuan Jin, an h-index of 9, ranking #7,429,200 of 7,710,434 researchers worldwide on the quality score.
Ranked on field-normalised excellence (50%), output (30%) and citations (20%). Counts come from OpenAlex author records, which occasionally merge different people who share a name or split one person into several.
Papers, co-authors, who cited this work and researchers on the nearest topics have tabs of their own, above. Is this your page? Claim it with your ORCID iD, or request a correction or removal.
Discussion
Ask a question or share a note about Fu‐Yuan Jin. Posts are plain text and can be reported.