Stefan Flachowsky
Stefan Flachowsky publishes mostly in Electrical and Electronic Engineering, Materials Chemistry and Biomedical Engineering, on topics such as Semiconductor materials and devices, Advancements in Semiconductor Devices and Circuit Design and Ferroelectric and Negative Capacitance Devices.
- World rank
- #2,437,396 of 7,710,434 ranked researchers
- Rank in Germany
- #120,499 of 364,343
- Works
- 32
- Citations
- 1.3k
- Citations per work
- 41.6
What does Stefan Flachowsky research?
Stefan Flachowsky's work is mostly in Engineering (90%), Materials Science (9%), Physics and Astronomy (1%).
Their six largest subfields, inside their fields and domains; the grey slice is everything else they publish. The interactive view splits every one of their works down to single topics.
The fields and subfields, with their numbers
- Physical Sciences32100.0%
- Engineering2990.2%
- Materials Science38.7%
- Physics and Astronomy01.1%
- 1Electrical and Electronic Engineering88% of their works
- 2Materials Chemistry8% of their works
- 3Biomedical Engineering2% of their works
- 4Ceramics and Composites1% of their works
- 5Atomic and Molecular Physics, and Optics1% of their works
Research topics
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Ferroelectric and Negative Capacitance Devices
- Integrated Circuits and Semiconductor Failure Analysis
- Silicon Carbide Semiconductor Technologies
- Silicon and Solar Cell Technologies
- MXene and MAX Phase Materials
- Advanced Memory and Neural Computing
Which keywords describe Stefan Flachowsky's research?
The keywords of their largest research topics: Atomic Layer Deposition, High-k Dielectrics, Nanowire Transistors, Tunnel Field-Effect Transistors, Neuromorphic Computing, Ferroelectricity, Hafnium Oxide and Failure Analysis.
- Memristor
- Solar Cells
- MXenes
- Reliability
- Failure Analysis
- Ferroelectricity
- Tunnel Field-Effect Transistors
- High-k Dielectrics
- Atomic Layer Deposition
- Nanowire Transistors
- Neuromorphic Computing
- Hafnium Oxide
- Integrated Circuits
- Wide Bandgap Semiconductors
- Silicon
- Two-Dimensional Materials
- Resistive Switching
Size is their works in the topics tagged with each word, from their 8 largest topics. Each links to the topic it comes from most.
All 17 words, with their numbers
- Atomic Layer Deposition281 topic
- High-k Dielectrics281 topic
- Nanowire Transistors191 topic
- Tunnel Field-Effect Transistors191 topic
- Neuromorphic Computing152 topics
- Ferroelectricity121 topic
- Hafnium Oxide121 topic
- Failure Analysis71 topic
- Integrated Circuits71 topic
- Reliability61 topic
- Wide Bandgap Semiconductors61 topic
- MXenes51 topic
- Silicon51 topic
- Solar Cells51 topic
- Two-Dimensional Materials51 topic
- Memristor31 topic
- Resistive Switching31 topic
Where does Stefan Flachowsky work?
Stefan Flachowsky's main affiliation in the publication record is GlobalFoundries (Germany), Germany.
How many publications and citations does Stefan Flachowsky have?
OpenAlex counts 32 works and 1,330 citations for Stefan Flachowsky, an h-index of 11, ranking #2,437,396 of 7,710,434 researchers worldwide on the quality score.
Ranked on field-normalised excellence (50%), output (30%) and citations (20%). Counts come from OpenAlex author records, which occasionally merge different people who share a name or split one person into several.
Papers, co-authors, who cited this work and researchers on the nearest topics have tabs of their own, above. Is this your page? Claim it with your ORCID iD, or request a correction or removal.
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