V. Huard
V. Huard publishes mostly in Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry, on topics such as Semiconductor materials and devices, Advancements in Semiconductor Devices and Circuit Design and Integrated Circuits and Semiconductor Failure Analysis.
- World rank
- #2,945,630 of 7,710,434 ranked researchers
- Rank in France
- #124,944 of 324,115
- Works
- 167
- Citations
- 4k
- Citations per work
- 24.2
What does V. Huard research?
V. Huard's work is mostly in Engineering (79%), Physics and Astronomy (6%), Materials Science (5%).
Their six largest subfields, inside their fields and domains; the grey slice is everything else they publish. The interactive view splits every one of their works down to single topics.
The fields and subfields, with their numbers
- Physical Sciences15693.6%
- Engineering13279.3%
- Physics and Astronomy105.9%
- Materials Science84.7%
- Computer Science63.7%
- Everything else116.4%
- 1Electrical and Electronic Engineering78% of their works
- 2Atomic and Molecular Physics, and Optics6% of their works
- 3Materials Chemistry4% of their works
- 4Hardware and Architecture4% of their works
- 5Biomedical Engineering1% of their works
- 6Electronic, Optical and Magnetic Materials1% of their works
Research topics
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- VLSI and Analog Circuit Testing
- Low-power high-performance VLSI design
- Semiconductor Quantum Structures and Devices
- Electronic and Structural Properties of Oxides
- Ferroelectric and Negative Capacitance Devices
Which keywords describe V. Huard's research?
The keywords of their largest research topics: Atomic Layer Deposition, High-k Dielectrics, Process Variation, Nanowire Transistors, Tunnel Field-Effect Transistors, Failure Analysis, Integrated Circuits and Embedded Cores.
- Ferroelectricity
- Oxide Interfaces
- Quantum Dots
- Test Data Compression
- Embedded Cores
- Failure Analysis
- Nanowire Transistors
- High-k Dielectrics
- Atomic Layer Deposition
- Process Variation
- Tunnel Field-Effect Transistors
- Integrated Circuits
- Low-Power
- VLSI Circuits
- Semiconductor
- Two-Dimensional Electron Gases
- Hafnium Oxide
Size is their works in the topics tagged with each word, from their 8 largest topics. Each links to the topic it comes from most. The words come from the keyword list OpenAlex gives each topic, not from the text of the papers, so a word can appear that none of the papers uses.
All 17 words, with their numbers
- Atomic Layer Deposition1261 topic
- High-k Dielectrics1261 topic
- Process Variation1182 topics
- Nanowire Transistors1041 topic
- Tunnel Field-Effect Transistors1041 topic
- Failure Analysis761 topic
- Integrated Circuits761 topic
- Embedded Cores141 topic
- Low-Power141 topic
- Test Data Compression141 topic
- VLSI Circuits141 topic
- Quantum Dots111 topic
- Semiconductor111 topic
- Oxide Interfaces101 topic
- Two-Dimensional Electron Gases101 topic
- Ferroelectricity91 topic
- Hafnium Oxide91 topic
Where does V. Huard work?
V. Huard's main affiliation in the publication record is STMicroelectronics (France), France.
How many publications and citations does V. Huard have?
OpenAlex counts 167 works and 4,035 citations for V. Huard, an h-index of 27, ranking #2,945,630 of 7,710,434 researchers worldwide on the quality score.
Ranked on field-normalised citation excellence (50%), output (30%) and citations (20%). Counts come from OpenAlex author records, which occasionally merge different people who share a name or split one person into several.
Papers, co-authors, who cited this work and researchers on the nearest topics have tabs of their own, above. Is this your page? Claim it with your ORCID iD, or request a correction or removal.
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