E. Josse
E. Josse publishes mostly in Electrical and Electronic Engineering, Biomedical Engineering and General Health Professions, on topics such as Semiconductor materials and devices, Advancements in Semiconductor Devices and Circuit Design and Integrated Circuits and Semiconductor Failure Analysis.
- World rank
- #4,283,060 of 7,710,434 ranked researchers
- Rank in France
- #180,268 of 324,115
- Works
- 79
- Citations
- 1.1k
- Citations per work
- 14.5
What does E. Josse research?
E. Josse's work is mostly in Engineering (86%), Materials Science (3%), Health Professions (2%).
Their six largest subfields, inside their fields and domains; the grey slice is everything else they publish. The interactive view splits every one of their works down to single topics.
The fields and subfields, with their numbers
- Physical Sciences7290.7%
- Engineering6886.0%
- Materials Science33.4%
- Physics and Astronomy11.3%
- Everything else67.6%
- Health Sciences11.7%
- Health Professions11.7%
- 1Electrical and Electronic Engineering83% of their works
- 2Biomedical Engineering3% of their works
- 3General Health Professions2% of their works
- 4Materials Chemistry2% of their works
- 5Electronic, Optical and Magnetic Materials2% of their works
- 6Atomic and Molecular Physics, and Optics1% of their works
Research topics
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Silicon Carbide Semiconductor Technologies
- Ferroelectric and Negative Capacitance Devices
- Low-power high-performance VLSI design
- Silicon and Solar Cell Technologies
- Electrostatic Discharge in Electronics
Which keywords describe E. Josse's research?
The keywords of their largest research topics: Process Variation, Atomic Layer Deposition, High-k Dielectrics, Nanowire Transistors, Tunnel Field-Effect Transistors, Failure Analysis, Integrated Circuits and Reliability.
- SCR Devices
- Solar Cells
- VLSI Circuits
- Hafnium Oxide
- CMOS Technology
- Reliability
- Failure Analysis
- Nanowire Transistors
- Atomic Layer Deposition
- Process Variation
- High-k Dielectrics
- Tunnel Field-Effect Transistors
- Integrated Circuits
- Wide Bandgap Semiconductors
- Ferroelectricity
- Low-Power
- Silicon
- ESD Protection
Size is their works in the topics tagged with each word, from their 8 largest topics. Each links to the topic it comes from most. The words come from the keyword list OpenAlex gives each topic, not from the text of the papers, so a word can appear that none of the papers uses.
All 18 words, with their numbers
- Process Variation652 topics
- Atomic Layer Deposition611 topic
- High-k Dielectrics611 topic
- Nanowire Transistors591 topic
- Tunnel Field-Effect Transistors591 topic
- Failure Analysis251 topic
- Integrated Circuits251 topic
- Reliability121 topic
- Wide Bandgap Semiconductors121 topic
- CMOS Technology102 topics
- Ferroelectricity71 topic
- Hafnium Oxide71 topic
- Low-Power61 topic
- VLSI Circuits61 topic
- Silicon51 topic
- Solar Cells51 topic
- ESD Protection41 topic
- SCR Devices41 topic
Where does E. Josse work?
E. Josse's main affiliation in the publication record is STMicroelectronics (France), France.
How many publications and citations does E. Josse have?
OpenAlex counts 79 works and 1,143 citations for E. Josse, an h-index of 20, ranking #4,283,060 of 7,710,434 researchers worldwide on the quality score.
Ranked on field-normalised citation excellence (50%), output (30%) and citations (20%). Counts come from OpenAlex author records, which occasionally merge different people who share a name or split one person into several.
Papers, co-authors, who cited this work and researchers on the nearest topics have tabs of their own, above. Is this your page? Claim it with your ORCID iD, or request a correction or removal.
Discussion
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