Harshit Agarwal
Harshit Agarwal publishes mostly in Electrical and Electronic Engineering, Materials Chemistry and Biomedical Engineering, on topics such as Advancements in Semiconductor Devices and Circuit Design, Semiconductor materials and devices and Silicon Carbide Semiconductor Technologies.
- World rank
- #5,714,320 of 7,710,434 ranked researchers
- Rank in United States
- #1,420,045 of 1,627,098
- Works
- 128
- Citations
- 1.7k
- Citations per work
- 13.0
What does Harshit Agarwal research?
Harshit Agarwal's work is mostly in Engineering (76%), Materials Science (4%), Computer Science (3%).
Their six largest subfields, inside their fields and domains; the grey slice is everything else they publish. The interactive view splits every one of their works down to single topics.
The fields and subfields, with their numbers
- Physical Sciences10985.3%
- Engineering9876.4%
- Materials Science53.8%
- Computer Science32.7%
- Physics and Astronomy32.4%
- Everything else1914.7%
- 1Electrical and Electronic Engineering71% of their works
- 2Materials Chemistry4% of their works
- 3Biomedical Engineering4% of their works
- 4Artificial Intelligence3% of their works
- 5Atomic and Molecular Physics, and Optics2% of their works
- 6Mechanical Engineering2% of their works
Research topics
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- Silicon Carbide Semiconductor Technologies
- Ferroelectric and Negative Capacitance Devices
- Electrostatic Discharge in Electronics
- Advanced Memory and Neural Computing
- Radio Frequency Integrated Circuit Design
- Low-power high-performance VLSI design
Which keywords describe Harshit Agarwal's research?
The keywords of their largest research topics: Process Variation, Nanowire Transistors, Tunnel Field-Effect Transistors, Atomic Layer Deposition, High-k Dielectrics, Neuromorphic Computing, Reliability and Wide Bandgap Semiconductors.
- Low-Power
- CMOS
- Memristor
- ESD Protection
- Ferroelectricity
- Wide Bandgap Semiconductors
- Neuromorphic Computing
- Atomic Layer Deposition
- Nanowire Transistors
- Process Variation
- Tunnel Field-Effect Transistors
- High-k Dielectrics
- Reliability
- CMOS Technology
- Hafnium Oxide
- SCR Devices
- Resistive Switching
- Oscillators
- VLSI Circuits
Size is their works in the topics tagged with each word, from their 8 largest topics. Each links to the topic it comes from most.
All 19 words, with their numbers
- Process Variation792 topics
- Nanowire Transistors701 topic
- Tunnel Field-Effect Transistors701 topic
- Atomic Layer Deposition661 topic
- High-k Dielectrics661 topic
- Neuromorphic Computing402 topics
- Reliability281 topic
- Wide Bandgap Semiconductors281 topic
- CMOS Technology252 topics
- Ferroelectricity251 topic
- Hafnium Oxide251 topic
- ESD Protection161 topic
- SCR Devices161 topic
- Memristor151 topic
- Resistive Switching151 topic
- CMOS101 topic
- Oscillators101 topic
- Low-Power91 topic
- VLSI Circuits91 topic
Where does Harshit Agarwal work?
Harshit Agarwal's main affiliation in the publication record is University of California, Berkeley, United States.
How many publications and citations does Harshit Agarwal have?
OpenAlex counts 128 works and 1,664 citations for Harshit Agarwal, an h-index of 22, ranking #5,714,320 of 7,710,434 researchers worldwide on the quality score.
Ranked on field-normalised excellence (50%), output (30%) and citations (20%). Counts come from OpenAlex author records, which occasionally merge different people who share a name or split one person into several.
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