M. Radosavljević
M. Radosavljević publishes mostly in Electrical and Electronic Engineering, Materials Chemistry and Condensed Matter Physics, on topics such as Semiconductor materials and devices, Advancements in Semiconductor Devices and Circuit Design and Carbon Nanotubes in Composites.
- World rank
- #213,388 of 7,710,434 ranked researchers
- Rank in United States
- #79,085 of 1,627,098
- Works
- 111
- Citations
- 7k
- Citations per work
- 62.9
What does M. Radosavljević research?
M. Radosavljević's work is mostly in Engineering (52%), Materials Science (21%), Physics and Astronomy (17%).
Their six largest subfields, inside their fields and domains; the grey slice is everything else they publish. The interactive view splits every one of their works down to single topics.
The fields and subfields, with their numbers
- Physical Sciences10090.1%
- Engineering5852.5%
- Materials Science2320.8%
- Physics and Astronomy1916.8%
- Everything else119.9%
- 1Electrical and Electronic Engineering42% of their works
- 2Materials Chemistry21% of their works
- 3Condensed Matter Physics9% of their works
- 4Atomic and Molecular Physics, and Optics8% of their works
- 5Biomedical Engineering8% of their works
- 6Mechanical Engineering3% of their works
Research topics
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Carbon Nanotubes in Composites
- GaN-based semiconductor devices and materials
- Graphene research and applications
- Nanowire Synthesis and Applications
- Silicon Carbide Semiconductor Technologies
- Ferroelectric and Negative Capacitance Devices
Which keywords describe M. Radosavljević's research?
The keywords of their largest research topics: Electronics, Atomic Layer Deposition, High-k Dielectrics, Nanowire Transistors, Tunnel Field-Effect Transistors, Carbon, III-Nitrides and Nanotubes.
- Reliability
- Ferroelectricity
- Nanosensors
- Graphene
- Nanotubes
- Carbon
- Nanowire Transistors
- Atomic Layer Deposition
- Electronics
- High-k Dielectrics
- Tunnel Field-Effect Transistors
- III-Nitrides
- Semiconductors
- Two-Dimensional Materials
- Nanowire
- Hafnium Oxide
- Wide Bandgap Semiconductors
Size is their works in the topics tagged with each word, from their 8 largest topics. Each links to the topic it comes from most. The words come from the keyword list OpenAlex gives each topic, not from the text of the papers, so a word can appear that none of the papers uses.
All 17 words, with their numbers
- Electronics462 topics
- Atomic Layer Deposition451 topic
- High-k Dielectrics451 topic
- Nanowire Transistors371 topic
- Tunnel Field-Effect Transistors371 topic
- Carbon271 topic
- III-Nitrides271 topic
- Nanotubes271 topic
- Semiconductors271 topic
- Graphene211 topic
- Two-Dimensional Materials211 topic
- Nanosensors191 topic
- Nanowire191 topic
- Ferroelectricity111 topic
- Hafnium Oxide111 topic
- Reliability111 topic
- Wide Bandgap Semiconductors111 topic
Where does M. Radosavljević work?
M. Radosavljević's main affiliation in the publication record is Intel (United States), United States.
How many publications and citations does M. Radosavljević have?
OpenAlex counts 111 works and 6,978 citations for M. Radosavljević, an h-index of 38, ranking #213,388 of 7,710,434 researchers worldwide on the quality score.
Ranked on field-normalised citation excellence (50%), output (30%) and citations (20%). Counts come from OpenAlex author records, which occasionally merge different people who share a name or split one person into several.
Other researchers named M. Radosavljević
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