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Silicon Carbide Semiconductor Technologies

Silicon Carbide Semiconductor Technologies is a research topic within Electrical and Electronic Engineering. Science Explorer counts 49k research works in it since 1950. 12.8% of them reached the world's top 10% most cited for their field and year.

This cluster of papers explores advancements in power electronics technology, focusing on wide bandgap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN), reliability of power devices, high-temperature electronics, IGBT modules, thermal management, and failure modes. The papers cover topics such as the performance evaluation of SiC and GaN power devices, material science and device physics in SiC technology, condition monitoring for device reliability, and the potential of SiC nanowires in power electronics.

  • Wide Bandgap Semiconductors
  • Reliability
  • Silicon Carbide
  • Power Devices
  • High-Temperature Electronics
  • IGBT Modules
  • GaN Power Devices
  • Thermal Management
  • Failure Modes
  • SiC Nanowires
Research works
49k
fractional, since 1950
In the world top 10%
6.2k
per year above
Top-10% rate
12.8%
share of its works in the world top 10%
Growth, 2013–17 → 2018–22
+28%
the tick is no change

Which countries lead Silicon Carbide Semiconductor Technologies research?

By volume, China and the United States publish the most (3k and 1.1k works in 2022–2025).

By volume, 2022–2025

  1. 1 China 3k works
  2. 2 United States 1.1k works
  3. 3 India 954 works
  4. 4 Japan 442 works
  5. 5 Germany 354 works
  6. 6 South Korea 272 works
  7. 7 Italy 241 works
  8. 8 France 236 works
  9. 9 United Kingdom 217 works
  10. 10 Taiwan 186 works

How concentrated that is

The same countries as shares of everything the list above accounts for. A node where two countries do two thirds of the work and one spread evenly across twelve read alike as a ranking and not at all alike here.

China: 42.7%United States: 16.0%India: 13.6%Japan: 6.3%6 others listed: 21.4%43%largest
China3,000 · 42.7%United States1,127 · 16.0%India954 · 13.6%Japan442 · 6.3%6 others listed1,505 · 21.4%

Shares of the rows listed above, not of the whole node.

Which institutions lead Silicon Carbide Semiconductor Technologies research?

By volume in 2022–2025, Zhejiang University publishes the most Silicon Carbide Semiconductor Technologies research, followed by Xi'an Jiaotong University and Huazhong University of Science and Technology.

Who are the leading researchers in Silicon Carbide Semiconductor Technologies?

The most-cited researchers publishing on Silicon Carbide Semiconductor Technologies include J. Furthmüller, Frede Blaabjerg and José Rodríguez.

  1. 1 J. Furthmüller Germany 14k citations
  2. 2 Frede Blaabjerg Denmark 12k citations
  3. 3 José Rodríguez Chile 6.8k citations

Ranked by citations received across their whole record, among researchers with at least three works on this topic.

Where is Silicon Carbide Semiconductor Technologies research done?

The largest centres of Silicon Carbide Semiconductor Technologies research in 2022–2025 are Beijing (China), Xi'an (China), Chengdu (China) and Shanghai (China). Among places with at least 20 works in it, it is an unusually large share of all research in Xi'an, Fayetteville and Aalborg.

Largest cities, 2022–2025

  1. 1 Beijing China 550 works
  2. 2 Xi'an China 280 works
  3. 3 Chengdu China 201 works
  4. 4 Shanghai China 200 works
  5. 5 Nanjing China 184 works
  6. 6 Hangzhou China 170 works
  7. 7 Wuhan China 169 works
  8. 8 Tokyo Japan 148 works
  9. 9 Guangzhou China 116 works
  10. 10 Changsha China 113 works

Where it is the local speciality

  1. Xi'an23.6 works37×
  2. FayettevilleUS · 53.1 works26×
  3. AalborgDK · 81.2 works16×
← less than its size predictsmore →

Location quotient: how much more of its research is in Silicon Carbide Semiconductor Technologies than the world average.

See Silicon Carbide Semiconductor Technologies on the map

Where is the best place to study Silicon Carbide Semiconductor Technologies?

Among universities, judged by research, Virginia Tech, Aalborg University and The University of Texas at Dallas score highest, combining excellence, specialisation, size, growth and international reach. Research strength is one signal when choosing where to study; it does not measure teaching.

0%10%20%30%mean 13.27%fractional works in this node (log) →share in the world top 10% →Virginia Tech: 72, 22.7%Aalborg University: 81, 9.2%The University of Texas at Dallas: 15, 25.8%University of Arkansas at Fayetteville: 52, 8.1%Hunan University: 56, 7.4%University of Tabriz: 19, 19.3%National Institute of Technology Karnataka: 17, 13.5%Chongqing University: 79, 4.0%Xi'an Jiaotong University: 98, 5.6%Tallinn University of Technology: 13, 17.1%The University of Te…Virginia TechAalborg UniversityUniversity of Arkans…
above the meannear itbelow it

One dot per university in the table below. The upper left is the interesting corner: small places doing unusually strong work.

#UniversityScoreTop 10%SpecialisationWorksGrowth
1 Virginia TechUnited States 73.222.7%15.0×72 +63.3%
2 Aalborg UniversityDenmark 71.69.2%18.2×81 +262.9%
3 The University of Texas at DallasUnited States 69.425.8%8.5×15 +233.0%
4 University of Arkansas at FayettevilleUnited States 62.28.1%26.0×52 +170.6%
5 Hunan UniversityChina 62.17.4%9.3×56 +591.9%
6 University of TabrizIran 61.419.3%9.1×19 +104.1%
7 National Institute of Technology KarnatakaIndia 59.913.5%10.7×17 +436.8%
8 Chongqing UniversityChina 58.54.0%8.3×79 +314.9%
9 Xi'an Jiaotong UniversityChina 58.25.6%7.1×98 +220.5%
10 Tallinn University of TechnologyEstonia 57.717.1%11.6×13 +60.4%

Universities only. Score blends excellence (30%), specialisation (25%), size (20%), growth (15%) and international reach (10%), 2015–2022; growth compares 2010–14 with 2015–19.

Is Silicon Carbide Semiconductor Technologies research growing?

Output in 2018–2022 was 28% higher than in 2013–2017, peaking in 2025. The fastest-growing topics are Silicon Carbide Semiconductor Technologies.

19801990200020102020
grewheldshrank

The same series as a ribbon — one cell per year, darker for more. The line above answers how much; this answers when.

Which topics inside it are moving

Growth and decline on one axis around a shared zero. Two lists side by side hide the thing that matters: whether the growth dwarfs the decline, or the other way round.