R. M. Huang
R. M. Huang publishes mostly in Electrical and Electronic Engineering, Materials Chemistry and Building and Construction, on topics such as Semiconductor materials and devices, Advancements in Semiconductor Devices and Circuit Design and Integrated Circuits and Semiconductor Failure Analysis.
- World rank
- #6,866,806 of 7,710,434 ranked researchers
- Rank in Taiwan
- #52,408 of 57,035
- Works
- 36
- Citations
- 222
- Citations per work
- 6.2
What does R. M. Huang research?
R. M. Huang's work is mostly in Engineering (94%), Materials Science (2%), Environmental Science (1%).
Their six largest subfields, inside their fields and domains; the grey slice is everything else they publish. The interactive view splits every one of their works down to single topics.
The fields and subfields, with their numbers
- Physical Sciences3597.1%
- Engineering3494.3%
- Materials Science11.9%
- Environmental Science00.9%
- Everything else12.9%
- 1Electrical and Electronic Engineering91% of their works
- 2Materials Chemistry2% of their works
- 3Building and Construction2% of their works
- 4Control and Systems Engineering1% of their works
- 5Global and Planetary Change1% of their works
- 6Biomedical Engineering1% of their works
Research topics
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Silicon and Solar Cell Technologies
- Ferroelectric and Negative Capacitance Devices
- Electrostatic Discharge in Electronics
- Silicon Carbide Semiconductor Technologies
- Low-power high-performance VLSI design
Which keywords describe R. M. Huang's research?
The keywords of their largest research topics: Process Variation, Atomic Layer Deposition, High-k Dielectrics, Nanowire Transistors, Tunnel Field-Effect Transistors, Failure Analysis, Integrated Circuits and CMOS Technology.
- Wide Bandgap Semiconductors
- SCR Devices
- Low-Power
- Solar Cells
- Hafnium Oxide
- CMOS Technology
- Failure Analysis
- Nanowire Transistors
- Atomic Layer Deposition
- Process Variation
- High-k Dielectrics
- Tunnel Field-Effect Transistors
- Integrated Circuits
- Ferroelectricity
- Silicon
- ESD Protection
- Reliability
- VLSI Circuits
Size is their works in the topics tagged with each word, from their 8 largest topics. Each links to the topic it comes from most. The words come from the keyword list OpenAlex gives each topic, not from the text of the papers, so a word can appear that none of the papers uses.
All 18 words, with their numbers
- Process Variation312 topics
- Atomic Layer Deposition281 topic
- High-k Dielectrics281 topic
- Nanowire Transistors281 topic
- Tunnel Field-Effect Transistors281 topic
- Failure Analysis111 topic
- Integrated Circuits111 topic
- CMOS Technology62 topics
- Ferroelectricity51 topic
- Hafnium Oxide51 topic
- Silicon51 topic
- Solar Cells51 topic
- ESD Protection31 topic
- Low-Power31 topic
- Reliability31 topic
- SCR Devices31 topic
- VLSI Circuits31 topic
- Wide Bandgap Semiconductors31 topic
Where does R. M. Huang work?
R. M. Huang's main affiliation in the publication record is United Microelectronics (Taiwan), Taiwan.
How many publications and citations does R. M. Huang have?
OpenAlex counts 36 works and 222 citations for R. M. Huang, an h-index of 7, ranking #6,866,806 of 7,710,434 researchers worldwide on the quality score.
Ranked on field-normalised citation excellence (50%), output (30%) and citations (20%). Counts come from OpenAlex author records, which occasionally merge different people who share a name or split one person into several.
Papers, co-authors, who cited this work and researchers on the nearest topics have tabs of their own, above. Is this your page? Claim it with your ORCID iD, or request a correction or removal.
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