Radiation Effects in Electronics
Radiation Effects in Electronics is a research topic within Electrical and Electronic Engineering. Science Explorer counts 24k research works in it since 1950. 14.3% of them reached the world's top 10% most cited for their field and year.
This cluster of papers focuses on the challenges and techniques for fault tolerance in electronic systems, particularly in the context of soft errors, radiation effects, and single event upsets in CMOS technology. It explores various methods for error detection, reliability evaluation, and mitigation of transient faults in nanoelectronics.
- Soft Errors
- Radiation Effects
- Error Detection
- Fault Tolerance
- CMOS Technology
- Single Event Upsets
- Reliability Evaluation
- Nanoelectronics
- Transient Faults
- Dependability
- Research works
- 24k fractional, since 1950
- In the world top 10%
- 3.4k per year above
- Top-10% rate
- 14.3% share of its works in the world top 10%
- Growth, 2013–17 → 2018–22
- +0% the tick is no change
Which countries lead Radiation Effects in Electronics research?
By volume, China and the United States publish the most (799 and 704 works in 2022–2025).
By volume, 2022–2025
- 1 China 799 works
- 2 United States 704 works
- 3 India 344 works
- 4 Germany 232 works
- 5 Italy 198 works
- 6 France 161 works
- 7 Japan 134 works
- 8 South Korea 103 works
- 9 United Kingdom 95 works
- 10 Spain 89 works
How concentrated that is
The same countries as shares of everything the list above accounts for. A node where two countries do two thirds of the work and one spread evenly across twelve read alike as a ranking and not at all alike here.
Shares of the rows listed above, not of the whole node.
Which institutions lead Radiation Effects in Electronics research?
By volume in 2022–2025, Politecnico di Torino publishes the most Radiation Effects in Electronics research, followed by Chinese Academy of Sciences and Xidian University.
By volume, 2022–2025
- 1 Politecnico di TorinoItaly 35 works
- 2 Chinese Academy of SciencesChina 32 works
- 3 Xidian UniversityChina 32 works
- 4 European Organization for Nuclear ResearchSwitzerland 29 works
- 5 Harbin Institute of TechnologyChina 22 works
- 6 University of Chinese Academy of SciencesChina 21 works
- 7 Centre National de la Recherche ScientifiqueFrance 20 works
- 8 National University of Defense TechnologyChina 19 works
- 9 Tsinghua UniversityChina 17 works
- 10 University of Electronic Science and Technology of ChinaChina 17 works
Who are the leading researchers in Radiation Effects in Electronics?
The most-cited researchers publishing on Radiation Effects in Electronics include H. F-W. Sadrozinski, M. Garcia-Sciveres and G. Watts.
- 1 H. F-W. Sadrozinski United States 9.1k citations
- 2 M. Garcia-Sciveres United States 8.2k citations
- 3 G. Watts United States 8k citations
- 4 G. N. Taylor Australia 7.7k citations
Ranked by citations received across their whole record, among researchers with at least three works on this topic.
Where is Radiation Effects in Electronics research done?
The largest centres of Radiation Effects in Electronics research in 2022–2025 are Beijing (China), Xi'an (China), Shanghai (China) and Moscow (Russia). Among places with at least 20 works in it, it is an unusually large share of all research in Geneva, Turin and Albuquerque.
Largest cities, 2022–2025
Where it is the local speciality
- GenevaCH · 30.2 works9.7×
- TurinIT · 42.9 works9.7×
- AlbuquerqueUS · 20.9 works8.1×
Location quotient: how much more of its research is in Radiation Effects in Electronics than the world average.
Where is the best place to study Radiation Effects in Electronics?
Among universities, judged by research, Xidian University, Politecnico di Torino and ETH Zurich score highest, combining excellence, specialisation, size, growth and international reach. Research strength is one signal when choosing where to study; it does not measure teaching.
One dot per university in the table below. The upper left is the interesting corner: small places doing unusually strong work.
| # | University | Score | Top 10% | Specialisation | Works | Growth |
|---|---|---|---|---|---|---|
| 1 | Xidian UniversityChina | 63.9 | 3.3% | 11.8× | 32 | +297.5% |
| 2 | Politecnico di TorinoItaly | 63.2 | 9.4% | 20.8× | 35 | +19.7% |
| 3 | ETH ZurichSwitzerland | 59.0 | 27.6% | 4.6× | 11 | +83.1% |
| 4 | Technical University of MunichGermany | 48.7 | 19.2% | 4.8× | 14 | +36.6% |
| 5 | Vanderbilt UniversityUnited States | 47.9 | 8.7% | 11.3× | 16 | -23.0% |
| 6 | National Research Nuclear University MEPhIRussia | 46.4 | 0.0% | 25.6× | 11 | +228.1% |
| 7 | University of FloridaUnited States | 46.1 | 21.5% | 4.0× | 15 | +7.7% |
| 8 | KU LeuvenBelgium | 41.3 | 8.9% | 4.2× | 14 | +115.1% |
| 9 | Karlsruhe Institute of TechnologyGermany | 41.3 | 13.2% | 6.1× | 12 | +15.6% |
| 10 | Université de MontpellierFrance | 41.2 | 11.1% | 9.2× | 8 | -44.7% |
Universities only. Score blends excellence (30%), specialisation (25%), size (20%), growth (15%) and international reach (10%), 2015–2022; growth compares 2010–14 with 2015–19.
Is Radiation Effects in Electronics research growing?
Output in 2018–2022 was 0% higher than in 2013–2017, peaking in 2002. The fastest-growing topics are Radiation Effects in Electronics.
The same series as a ribbon — one cell per year, darker for more. The line above answers how much; this answers when.
Which topics inside it are moving
Growth and decline on one axis around a shared zero. Two lists side by side hide the thing that matters: whether the growth dwarfs the decline, or the other way round.