Siberian Research and Design Institute (Russia)
- Research works
- 45 ▲ 4% vs 2013–17
- Citations
- 115 2.5 per fractional work
- Top-10% rate
- 0.0% record average 16.5%
- Open access
- 23% world 28%
Not ranked overall: Siberian Research and Design Institute (Russia) is under the volume floor below which an excellence rate is noise. Not ranked is not the same as ranked last.
Field profile
Location quotient across every field it publishes in: outside the ring is more than an institution of this size would be expected to publish, inside it is less.
Rings at 0.5×, 1× and 2×. Widest outward: Physics and Astronomy, 6.1×. Every wedge is a field page.
Which keywords describe research at Siberian Research and Design Institute (Russia)?
By fractional works in all years, weighted toward what it does more of than the world: Process Variation, CMOS, Nanowire Transistors, Reliability, Tunnel Field-Effect Transistors, CMOS Technology, Integrated Circuits and Power Electronics.
- Microfabrication
- Fault Tolerance
- Ancient DNA
- Digital Transformation
- SCR Devices
- Nanoelectronics
- Electric Vehicle Charging
- Innovation
- Renewable Energy Integration
- Functional Foods
- ADC
- Nutrition
- Energy Efficiency
- Food Security
- Frequency Synthesizer
- Power Electronics
- Tunnel Field-Effect Transistors
- Reliability
- CMOS Technology
- CMOS
- Process Variation
- Climate Change
- Nanowire Transistors
- Sustainable Development
- Integrated Circuits
- Low-Power
- Thermal Management
- Delta-Sigma Modulator
- Low-Noise Amplifiers
- Oscillators
- Agricultural Development
- Neural Recording
- Silicon Carbide
- ESD Protection
- Energy Conversion
- Power Devices
- Wide Bandgap Semiconductors
- Regional Development
- Artificial Neural Networks
- Genomic Analysis
Size is fractional works in all years in the topics tagged with each word; colour is the word's share of this institution's work against its share of the world's. The 40 words are chosen for being large and distinctive. Each links to the topic it comes from most.
All 40 words, with their numbers
- Process Variation4▲ 80×2 topics
- CMOS3▲ 92×2 topics
- Climate Change3▲ 2.6×10 topics
- CMOS Technology3▲ 49×4 topics
- Nanowire Transistors3▲ 91×1 topic
- Reliability3▲ 65×3 topics
- Sustainable Development3▲ 5.1×5 topics
- Tunnel Field-Effect Transistors3▲ 91×1 topic
- Integrated Circuits3▲ 25×3 topics
- Power Electronics2▲ 19×5 topics
- Low-Power2▲ 76×2 topics
- Frequency Synthesizer2▲ 72×2 topics
- Thermal Management2▲ 15×2 topics
- Food Security2▲ 10×3 topics
- Delta-Sigma Modulator2▲ 71×2 topics
- Energy Efficiency2▲ 5.0×5 topics
- Low-Noise Amplifiers2▲ 91×1 topic
- Nutrition2▲ 8.5×2 topics
- Oscillators2▲ 91×1 topic
- ADC2▲ 93×1 topic
- Agricultural Development2▲ 30×1 topic
- Functional Foods2▲ 52×1 topic
- Neural Recording2▲ 93×1 topic
- Renewable Energy Integration2▲ 13×2 topics
- Silicon Carbide2▲ 68×2 topics
- Innovation1▲ 3.4×4 topics
- ESD Protection1▲ 137×1 topic
- Electric Vehicle Charging1▲ 38×2 topics
- Energy Conversion1▲ 17×2 topics
- Nanoelectronics1▲ 17×2 topics
- Power Devices1▲ 36×1 topic
- SCR Devices1▲ 137×1 topic
- Wide Bandgap Semiconductors1▲ 58×1 topic
- Digital Transformation1▲ 8.7×3 topics
- Regional Development1▲ 9.2×3 topics
- Ancient DNA1▲ 38×1 topic
- Artificial Neural Networks1▲ 5.3×2 topics
- Fault Tolerance1▲ 11×2 topics
- Genomic Analysis1▲ 7.5×1 topic
- Microfabrication1▲ 32×2 topics
Which research topics does Siberian Research and Design Institute (Russia) publish most on?
By volume in 2022–2025: Educational Methods and Teacher Development, Education and Professional Development, Educational Innovations and Challenges and Semiconductor Quantum Structures and Devices.
Area is fractional works; colour is the subfield each topic belongs to.
- 1 Educational Methods and Teacher Development Information Systems 0 works
- 2 Education and Professional Development Education 0 works
- 3 Educational Innovations and Challenges Information Systems 0 works
- 4 Semiconductor Quantum Structures and Devices Atomic and Molecular Physics, and Optics 0 works
- 5 Advancements in Semiconductor Devices and Circuit Design Electrical and Electronic Engineering 0 works
- 6 Semiconductor materials and devices Electrical and Electronic Engineering 0 works
- 7 GaN-based semiconductor devices and materials Condensed Matter Physics 0 works
- 8 Silicon Carbide Semiconductor Technologies Electrical and Electronic Engineering 0 works
- 9 Electrostatic Discharge in Electronics Electrical and Electronic Engineering 0 works
- 10 African Studies and Geopolitics Anthropology 0 works
How open and international is its research?
Against the world’s own shares — the tick on each track. Both are shares of its output, so they sit on one scale and can be read against each other as well as against the world.
World: 28% of research is openly available.
World: 19% is written across borders.
How has Siberian Research and Design Institute (Russia)'s research output changed?
Output in 2018–2022 was 4% higher than in 2013–2017.
The same series as a ribbon — one cell per year, darker for more. The line above answers how much; this answers when.
Other research institutions in Novosibirsk
- Novosibirsk State University
- Siberian Branch of the Russian Academy of Sciences
- Novosibirsk State Technical University
- Boreskov Institute of Catalysis
- Institute of Cytology and Genetics
- Institute of Thermophysics
- Sobolev Institute of Mathematics
- Institute of Semiconductor Physics
Research measures only: rankings here say nothing about teaching, admissions or student experience. Comparable institutions and collaboration partners are in the interactive view on the map.